 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - MARCH 1996 PARTMARKING DETAIL 7 - SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 50 200 800 20 360 -55 to +150 SOT23 UNIT V mA mA V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS 50 0.5 1.5 100 0.5 5 100 3.5 120 50 25 8 10 10 15 25 MIN. MAX. UNIT CONDITIONS. V V nA A A nA mS pF pF pF ns ns ns ns VDD 30V, ID=280mA VDS=25V, VGS=0V, f=1MHz ID=0.25mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=50V, VGS=0 VDS=50V, VGS=0V, T=125C(2) VDS=20V, VGS=0 VGS=5V,ID=200mA VDS=25V,ID=200mA RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 72 BSS138 TYPICAL CHARACTERISTICS IDS -Drain Source Current (A) 1.0 VGS =10V 5V 4.5V 4V 100 VGS =2.5V 3V 3.5V 4V 3.5V 0.6 3V RDS(on) - Drain Source On Resistance (Ohms) 0.8 10 0.4 2.5V 0.2 80s Pulsed Test 5V 7V 10V 2V 0 0 1 2 3 4 5 1.0 0.01 0.1 1.0 VDS -Drain Source Voltage (Volts) ID-Drain Current (Amperes) Saturation Characteristics Typical On Resistance vs. Drain Current gfs -Forward Transconductance (mS) 500 gfs -Forward Transconductance (mS) 500 400 400 300 VDS =25V 80s Pulsed Test 300 VDS =25V 80s Pulsed Test 200 200 100 100 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 ID -Drain Current (Amperes) VGS -Gate Source Voltage (Volts) Typical Transconductance vs. Drain Current 100 Ciss Crss Typical Transconductance vs. Gate - Source Voltage Normalised RDS(on) And VGS(th) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 0 40 80 0 Coss NOTE:-VGS =0V F=1MHz Ciss RDS(on) AT VGS =5V ID=200mA C-Capacitance (pF) 10 Coss VGS(th) AT ID=1mA VDS=VGS Crss 1 0.1 1 10 100 120 160 VDS -Drain Source Voltage (Volts) T-Temperature ( C) Typical Capacitance vs. Drain - Source Voltage Normalised RDS(on) And VGS(th) vs. Temperature 3 - 73 BSS138 TYPICAL CHARACTERISTICS VGS -Gate-Source Voltage (Volts) 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID =200mA VD D 1.0 IDS - Drain Source Current (A) 0V =2 0.8 80s Pulsed Test VDS =10V V 30 V 50 0.6 0.4 0.2 0 0 1 2 3 4 5 Q-Charge (nC) VGS - Gate Source Voltage (V) Typical Gate Charge vs. Gate-Source Voltage VSD - Source Drain Voltage (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100A 1mA 10mA 80s Pulsed Test VGS =0 Typical Transfer Characteristics 100mA 1A IDS - Drain Source Current Typical Diode Forward Voltage 3 - 74 |
Price & Availability of BSS138
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |